J. Sadowski et al., GROWTH-PROCESSES OF ZNTE EPILAYERS DEPOSITED BY MBE ON GAAS(100) VICINAL SURFACES - STUDIES BY STATIC AND DYNAMIC RHEED, Acta Physica Polonica. A, 87(1), 1995, pp. 225-228
Static and dynamic reflection high energy electron diffraction (RHEED)
has been applied for studying the initial growth processes of ZnTe cr
ystallized by molecular beam epitaxy (MBE) on vicinal surfaces of GaAs
(100) substrates. Atomically smooth ZnTe epilayers have been grown by
MBE when in situ thermal desorption of the substrate protecting oxide
layer was performed in the ultra high vacuum environment of the vacuum
growth chamber just before the growth of ZnTe started. By gradual inc
reasing of the substrate temperature of the crystallized ZnTe epilayer
s from 300 degrees C to 420 degrees C, when recording the RHEED intens
ity oscillations at these and eleven intermittent temperatures, it has
been shown that the transition from the 2D-nucleation growth mechanis
m to the step-flow growth mechanism of ZnTe occurs at 410 degrees C. M
easuring periods of RHEED intensity oscillations recorded during the M
BE growth processes it has been demonstrated that the growth rate of Z
nTe at constant fluxes of the constituent elements decreases with incr
easing temperature from 0.37 ML/s at 300 degrees C to 0.22 ML/s at 400
degrees C.