DAMAGE PRODUCTION IN AS IMPLANTED GAAS1-XPX

Post-implantation damage in GaAs1-xPx compounds (x = 0, 0.15, 0.39, 0. 65, and 1) implanted with 150 keV As ions in the dose range 1 x 10(13) -8 x 10(13) cm(-2) at 120 K was investigated. The depth distribution o f damage and the degree of amorphization were measured by Rutherford b ackscattering 1.7 MeV He+ channeling technique. The critical damage do se and the critical energy density necessary for amorphization were de termined. It is shown that GaAsP is easier to amorphize (lower critica l damage dose) than the binary crystals (GaAs, Gap) at low temperature s.