N. Foroudi et Ta. Kwasniewski, CMOS HIGH-SPEED DUAL-MODULUS FREQUENCY-DIVIDER FOR RF FREQUENCY-SYNTHESIS, IEEE journal of solid-state circuits, 30(2), 1995, pp. 93-100
The architecture of a high-speed low-power-consumption CMOS dual-modul
us frequency divider is presented. Compared to other designs fabricate
d with comparable CMOS technologies, this architecture has a better po
tential for high-speed operation. The circuit consumes less power than
previously reported CMOS circuits, and it approaches the performance
previously achieved only by bipolar or GaAS devices. The proposed circ
uit uses level-triggered differential logic to create an input-frequen
cy-entrained oscillator performing a dual-modulus frequency division.
In addition to high-speed and low-power consumption, the divider has a
low-input signal level requirement which facilitates its incorporatio
n into RF applications. Fabricated with a 1.2-mum 5-V CMOS technology,
the divider operates up to 1.5 GHz, consuming 13.15 mW, and requiring
less than 100 mV rms input amplitude.