FABRICATION OF 0.1-MU-M METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH THE ATOMIC-FORCE MICROSCOPE

Authors
MINNE SC SOH HT FLUECKIGER P QUATE CF
Citation
Sc. Minne et al., FABRICATION OF 0.1-MU-M METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH THE ATOMIC-FORCE MICROSCOPE, Applied physics letters, 66(6), 1995, pp. 703-705
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
6
Year of publication
1995
Pages
703 - 705
Database
ISI
SICI code
0003-6951(1995)66:6<703:FO0MFT>2.0.ZU;2-#