A NEW PLANAR DEVICE BASED ON SEEBECK EFFECT FOR GAS-SENSING APPLICATIONS

Citation
Ca. Papadopoulos et al., A NEW PLANAR DEVICE BASED ON SEEBECK EFFECT FOR GAS-SENSING APPLICATIONS, Sensors and actuators. B, Chemical, 34(1-3), 1996, pp. 524-527
Citations number
9
Categorie Soggetti
Electrochemistry,"Chemistry Analytical","Instument & Instrumentation
ISSN journal
09254005
Volume
34
Issue
1-3
Year of publication
1996
Pages
524 - 527
Database
ISI
SICI code
0925-4005(1996)34:1-3<524:ANPDBO>2.0.ZU;2-R
Abstract
A new planar sensor structure has been developed, which takes advantag e of the differential temperature appearing between the two halves of a tin or an indium oxide film, one half of which is covered with a cat alyst, in the presence of a combustible gas. Since the rates of reacti on of the combustible gas on the two halves of the film are expected t o be different, different amounts of heat are delivered at the two hal ves of the film, resulting in a temperature gradient across the film. According to the Seebeck effect, this temperature gradient produces a voltage difference at the two edges of the film. Different Seebeck vol tage values have been recorded when the structure is exposed to variou s gases, due to the different heat of adsorption or combustion deliver ed from each gas at the two portions of the film.