Fluorine diffusion has been studied between 1600 and 2000 degrees C in
vapour-deposited silica layers. In particular, the influence of the c
ommon impurities hydroxyl and chlorine and the codopant phosphorous ox
ide was investigated. Hydroxyl and especially phosphorous enhance the
fluorine diffusion rate whereas chlorine shows no detectable effect. T
he determined Arrhenius dependence of the diffusion coefficient agrees
well with previous investigations made at lower temperatures. Additio
nally, diffusion coefficients for chlorine were derived.