DEEP ETCHED INGAAS INP QUANTUM DOTS WITH STRONG LATERAL CONFINEMENT EFFECTS/

have developed InGaAs/InP quantum dots with diameters down to 20 nm by high resolution electron beam lithography and wet chemical etching. D ue to the damage free wet etching process, the structures are free of significant optically inactive (''dead'') layers. The quantum efficien cy of the smallest dots investigated is on the order of a few percent of the efficiency of the two dimensional layers. With decreasing dot s ize the lateral quantization results in a significant shift of the lum inescence line to higher energies. Furthermore the emission shows high energetic features which occur due to transitions between higher late ral quantized states in the dots.