LATERAL QUANTIZATION EFFECTS IN THE OPTICAL-SPECTRA OF INGAAS GAAS QUANTUM WIRES/

We have investigated low and high density luminescence spectra of modu lated barrier InGaAs/GaAs quantum wires with widths down to the 20 nm range. In this approach a lateral confinement is obtained by selective removal of the GaAs cap layer in the barrier regions between the wire s. As the InGaAs layer containing the wires serves also as a lateral b arrier the influence of nonradiative recombination in the etched struc tures is significantly reduced. High excitation luminescence experimen ts show a clear band filling of the structures already at remarkably l ow excitation intensities and reveal different lateral subband transit ions. In sufficiently high magnetic fields a transition from size quan tization to Landau quantization is observed.