Precision measurements and a comparative analysis were made of the emi
ssion spectra of GaAs/AlGaAs and InGaAs/GaAs heterostructure injection
lasers with quantum-well active layers and monolithic plane-plane res
onator cavities. Attention was focused on the correlation between the
spectral broadening factor and the parameters of single-frequency lasi
ng. Single-frequency emission at lambda = 975 nm was observed for a qu
antum-well laser with strained active layers and a cw output power in
excess of 100 mW was reached when the side longitudinal modes were sup
pressed by more than 30 dB.