QUANTUM CORRECTIONS TO THE TEMPERATURE-DE PENDENCE OF BI FILM CONDUCTIVITY IN A STRONG ELECTRIC-FIELD .1. LOCALIZATION CORRECTION

The temperature variation of the quantum correction to the thin (appro ximately 100 angstrom) Bi film conductivity related to the effect of w eak electron localization is studied under the condition of electron o verheating. It is found that in the presence of strong current the loc alization correction decreases due to the increasing electron temperat ure; no direct influence of the electric field E on the localization c orrection (at least at E less-than-or-similar-to 20 V . cm-1) is obser ved. On electron overheating, which is described by two different temp eratures of electrons T(e) and phonons T(ph), the electron temperature produces the determining effect on the localization correction value.