RELAXATION-BASED TRANSIENT SENSITIVITY COMPUTATIONS FOR MOSFET CIRCUITS

Authors
Citation
Cj. Chen et Ws. Feng, RELAXATION-BASED TRANSIENT SENSITIVITY COMPUTATIONS FOR MOSFET CIRCUITS, IEEE transactions on computer-aided design of integrated circuits and systems, 14(2), 1995, pp. 173-185
Citations number
13
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Science Hardware & Architecture
ISSN journal
02780070
Volume
14
Issue
2
Year of publication
1995
Pages
173 - 185
Database
ISI
SICI code
0278-0070(1995)14:2<173:RTSCFM>2.0.ZU;2-W
Abstract
In this paper, we propose two new methods for computing the transient sensitivities-of large scale MOSFET circuits, which exploit the relaxa tion-based circuit simulation techniques, the waveform relaxation (WR) method and the iterated timing analysis (ITA) method. Sufficient cond itions are stated and proven, which are quite mild for MOSFET circuits , for convergence of these new methods. A pruning scheme, which prunes the sensitivity circuits, takes the positions of the design parameter s as well as the outputs of interest into account and saves any redund ant subcircuit computation even though that subcircuit may not be late nt. By modifying the original WR and ITA algorithms, we also present p ractical computational algorithms which can process multiple design pa rameters. These practical algorithms retain most of the structures of the original algorithms, which can easily be implemented into availabl e relaxation-based circuit simulators. These new methods have been imp lemented and the experimental results for several circuits are shown t o demonstrate their effectiveness.