ELECTRONIC-ENERGY LEVELS OF AN IDEAL VACANCY IN II3-V-2 COMPOUNDS

The electronic properties of neutral ideal vacancies in some II-V comp ounds have been studied in the Green's-function framework and using th e tight-binding method. It was shown that deep levels in the fundament al energy gap are created only for cation T-2 levels in phosphides and anion A(1) level for Zn3As2. The cation T-2 level for arsenides is de generate (or nearly degenerate) with the top of the valence bands.