FORMATION OF SHARPLY PEAKED SIDELOBES IN LARGE-APERTURE SINGLE-PASS SEMICONDUCTOR-LASER AMPLIFIERS

Authors
WHITE JK MCINERNEY JG MOLONEY JV
Citation
Jk. White et al., FORMATION OF SHARPLY PEAKED SIDELOBES IN LARGE-APERTURE SINGLE-PASS SEMICONDUCTOR-LASER AMPLIFIERS, Electronics Letters, 31(1), 1995, pp. 38-39
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
1
Year of publication
1995
Pages
38 - 39
Database
ISI
SICI code
0013-5194(1995)31:1<38:FOSPSI>2.0.ZU;2-J
Abstract
Single-pass semiconductor laser amplifiers are shown theoretically to exhibit sharply peaked lobes ('bat ears') at the edges of the near-fie ld output. We discuss the mechanism for their formation and show that it is qualitatively different from spontaneous filamentation in homoge neous media.