1.3-MU-M MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING AN INGAAS MSM PHOTODIODE AND ALGAAS GAAS HEMTS GROWN ON GAAS/

Authors
HURM V BENZ W BERROTH M FINK T FRITZSCHE D HAUPT M HOFMANN P JAKOBUS T KOHLER K LUDWIG M MAUSE K RAYNOR B ROSENZWEIG J
Citation
V. Hurm et al., 1.3-MU-M MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING AN INGAAS MSM PHOTODIODE AND ALGAAS GAAS HEMTS GROWN ON GAAS/, Electronics Letters, 31(1), 1995, pp. 67-68
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
1
Year of publication
1995
Pages
67 - 68
Database
ISI
SICI code
0013-5194(1995)31:1<67:1MIORU>2.0.ZU;2-9
Abstract
The first 1.3 mu m monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substr ate has been fabricated. At each differential output of the implemente d multistage amplifier the transimpedance is 26.8k Omega (into 50 Omeg a). The bandwidth of 430 MHz implies suitability for transmission rate s up to 622Mbit/s.