ALN-GAN QUARTER-WAVE REFLECTOR STACK GROWN BY GAS-SOURCE MBE ON (100)GAAS

Authors
FRITZ IJ DRUMMOND TJ
Citation
Ij. Fritz et Tj. Drummond, ALN-GAN QUARTER-WAVE REFLECTOR STACK GROWN BY GAS-SOURCE MBE ON (100)GAAS, Electronics Letters, 31(1), 1995, pp. 68-69
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
1
Year of publication
1995
Pages
68 - 69
Database
ISI
SICI code
0013-5194(1995)31:1<68:AQRSGB>2.0.ZU;2-Y
Abstract
A 15 period, wurtzite-structure AlN-GaN reflector stack has been grown on (100) GaAs by gas-source molecular beam epitaxy. A peak reflectanc e of over 90% has been realised, in agreement with a matrix-method com puter simulation. Our results support the feasibility of vertical Fabr y-Perot cavity optoelectronics using nitride materials.