AMORPHOUS-SILICON ACTIVE GATE FOR POLYSILICON TFT

The excessive leakage current of polycrystalline silicon (polysilicon) TFTs, is one of the major impediments to their use in flat panel disp lays. The authors present new results on the use of amorphous silicon- based active gates to control the leakage current of the polysilicon T FTs. Moreover, the proposed technology, which is the first implementat ion of an amorphous silicon active gate recess, relies on a standard p rocess and may ease the design rules for the realisation of TFTs.