CALCULATING DOUBLE-EXPONENTIAL DIODE MODEL PARAMETERS FROM PREVIOUSLYEXTRACTED SINGLE-EXPONENTIAL MODEL PARAMETERS

Authors
SANCHEZ FJG ORTIZCONDE A LIOU JJ
Citation
Fjg. Sanchez et al., CALCULATING DOUBLE-EXPONENTIAL DIODE MODEL PARAMETERS FROM PREVIOUSLYEXTRACTED SINGLE-EXPONENTIAL MODEL PARAMETERS, Electronics Letters, 31(1), 1995, pp. 71-72
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
1
Year of publication
1995
Pages
71 - 72
Database
ISI
SICI code
0013-5194(1995)31:1<71:CDDMPF>2.0.ZU;2-C
Abstract
A procedure is proposed to calculate both pre-exponential reverse curr ents of the double-exponential model of a diode's current-voltage expe rimental characteristics from previously extracted reverse current and diode quality factor of the diode's single-exponential model. The pro cedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance.