HIGH PEAK-TO-VALLEY CURRENT RATIO IN0.22GA0.78AS AIAS RTDS ON GAAS USING RELAXED INXGA1-XAS BUFFERS/

Authors
AGGARWAL RJ FONSTAD CG
Citation
Rj. Aggarwal et Cg. Fonstad, HIGH PEAK-TO-VALLEY CURRENT RATIO IN0.22GA0.78AS AIAS RTDS ON GAAS USING RELAXED INXGA1-XAS BUFFERS/, Electronics Letters, 31(1), 1995, pp. 75-77
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
1
Year of publication
1995
Pages
75 - 77
Database
ISI
SICI code
0013-5194(1995)31:1<75:HPCRIA>2.0.ZU;2-C
Abstract
The authors have grown In0.22Ga0.78As/AlAs resonant tunnelling diodes (RTDs) on relaxed InxGa1-xAs buffers on GaAs substrates, which show th e largest peak-to-valley current ratio (PVCR), 13:1, ever reported for GaAs-based RTDs. X-ray diffraction and photoluminescence (PL) studies confirm the composition and relaxation of the buffers. The intrinsic device performance is excellent despite the presense of some dislocati ons in the active layers. However, it appears that the relaxed buffers do add series resistance to the intrinsic device.