A Facing Target Sputtering (FTS) technique with a configuration consis
ting of two sets of vertically parallel facing targets and a substrate
holder mounted perpendicular to the target planes has been designed a
nd fabricated. This system is capable of producing thin multilayer fil
ms as well as alloy films. The discharge characteristics of the FTS sy
stem when dc power is applied is analysed and the discharge currents w
ere found to be 3-5 times the values obtained with a single target (th
e conventional dc sputtering). The discharge currents also strongly de
pend on the Inter Target Distance (ITD) showing a decreasing trend wit
h increasing ITD. The influence of pressure, Substrate To Target Dista
nce (STD) and the ITD on the rate of deposition of copper films is stu
died. The rate of deposition increases with increase in Argon pressure
and decreases with increase in STD and ITD. Copyright (C) 1996 Elsevi
er Science Ltd.