LOW-LOAD INDENTATION BEHAVIOR OF HFN THIN-FILMS DEPOSITED BY REACTIVERF-SPUTTERING

Deformation of HfN thin films deposited by the reactive sputtering met hod on silicon and alumina substrates has been investigated using dept h-sensing indentation. The experiments performed in a low load range ( 2-50 mN) revealed that even extremely shallow indentations were affect ed by the elastic/plastic response of the substrate. The analysis of t he shape of the indentation load-depth hysteresis loops and of convent ional hardness data was supplemented by considerations based on the re cently proposed energy principle of indentation.