ELECTRICAL-CONDUCTION OF GLASSES IN THE S YSTEM FE2O3-SB2O3-TEO2

Fe2O3-Sb2O3-TeO2 glasses were prepared by the press-quenching method a nd their dc conductivities were measured. The glass formation region w as found to be 0 less-than-or-equal-to Fe2O3 less-than-or-equal-to 15 mol%, 0 less-than-or-equal-to Sb2O3 less-than-or-equal-to 18 mol%, and 78 less-than-or-equal-to TeO2 < 100 mol%. Seebeck coefficient measure ments showed that these glasses were n-type semiconductors. The glasse s gave conductivities sigma ranging from 1.62 x 10(-6) to 1.86 x 10(-7 ) S.cm-1 at 473 K. The dc conductivity increased with an increase in F e2O3 content. Evaluated carrier mobility and concentration ranged from 7.5 x 10(-10) to 5.3 x 10(-3) cm2.V-1.s-1 and from 1.5 x 10(21) to 1. 9 x 10(15) cm-3 at 473 K, respectively. The conduction of these glasse s was due to non-adiabatic small polaron hopping.