ETCHING OF ZINC-OXIDE FILMS BY ACETYLACET ONE

A new etching method using organic solvents instead of acids was devel oped for ZnO films as well as MgO films. ZnO films prepared by normal pressure chemical vapor deposition (NP-CVD) and R.F.-magnetron sputter ing were etched at 30-60-degrees-C in a methanol solution of acetylace tone (2,4-pentadione). The etching rate of the film prepared by R.F.-m agnetron sputtering was smaller than that prepared by NP-CVD. The acti vation energy of etching for the film prepared by R.F.-magnetron sputt ering was 59 kJ.mol-1.