AN INGAAS GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL RING LASER WITH A REACTIVE ION-ETCHED TETRAGONAL CAVITY

An InGaAs-GaAs-AlGaAs strained layer quantum-well ring laser with a te tragonal cavity consisting of one symmetric and one asymmetric corner reflector both fabricated by reactive ion etching is described. Two be ams emit from one facet with inclined angles predicted by Snell's Law. An increase of the threshold with incident angle is observed. Longitu dinal mode behavior and L-I characteristics, which indicate the presen ce of strong competition between clockwise and counter-clockwise trave ling waves, are described.