PASSIVATION OF THE GAAS(100) SURFACE BY III2-VI3(110) GALLIUM CHALCOGENIDES

Authors
SYSOEV BI BEZRYADIN NN KOTOV GI AGAPOV BL STRYGIN VD
Citation
Bi. Sysoev et al., PASSIVATION OF THE GAAS(100) SURFACE BY III2-VI3(110) GALLIUM CHALCOGENIDES, Semiconductors, 29(1), 1995, pp. 12-16
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
1
Year of publication
1995
Pages
12 - 16
Database
ISI
SICI code
1063-7826(1995)29:1<12:POTGSB>2.0.ZU;2-5