ACTIVE INDUCTORS FOR GAAS AND BIPOLAR TECHNOLOGIES

Integrated high performance gallium arsenide and silicon active induct or configurations for microwave frequencies are examined in this artic le. The existing topologies are considered and a new aspect of compari ng the performance of different topologies based on a more complete an alysis is utilised, Drawbacks of GaAs technology in this particular ca se are recognised, while benefits attained by using bipolar technology are presented. A theoretical basis for designing bipolar inductors is examined. On the basis of these studies a new method for raising the Q-factor of an active inductor is found and applied to two novel GaAs Q-enhanced active inductors. New applications for active high-Q resona tors are found and their realisation aspects are considered. Integrate d test circuits have been designed, and the simulated and experimental results are presented.