HYDROGEN PROFILING AND THE STOICHIOMETRY OF AN A-SINX-H FILM

Authors
AVASTHI DK ACHARYA MG TAREY RD MALHOTRA LK MEHTA GK
Citation
Dk. Avasthi et al., HYDROGEN PROFILING AND THE STOICHIOMETRY OF AN A-SINX-H FILM, Vacuum, 46(3), 1995, pp. 265-267
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
46
Issue
3
Year of publication
1995
Pages
265 - 267
Database
ISI
SICI code
0042-207X(1995)46:3<265:HPATSO>2.0.ZU;2-F
Abstract
The stoichiometry of a-SiNx:H films is determined by conventional elas tic recoil detection analysis (ERDA) using 90 MeV Ni-58 ions. Hydrogen depth profiling indicated that the non-uniformity in H concentration across the film thickness is about 12%. The present experiment indicat ed the capability of conventional ERDA for simultaneous multi-element detection in a thin film sample (having well-separated masses) without the use of a sophisticated detection system.