INVESTIGATION OF MULTILAYERED GE SI STRUCTURES WITH VARYING THICKNESSES/

The aim of this paper is the investigation of a GeSi/Si heterostructur e formation obtained by deposition of Ge and Si layers of different th ickness. GexSi1-x/Si films obtained by MBE in high vacuum were multila yered systems with alternate Si and Ge layers. The layer thickness was 10-150 Angstrom. The samples were obtained at substrate temperatures from RT to 700 degrees C. The transmission electron microscopy (TEM) a nd Rutherford backscattering spectroscopy (RBS) investigation allowed one to propose a model for the GeSi/Si heterostructure formation proce ss during MBE. The data on mutual Ge and Si diffusion at different sub strate temperatures were obtained and the temperature range of layer i nterface mixing was defined. HREM investigation of the film and interf ace structure at different T-s allows one to define the conditions of 2-D and 3-D film growth.