ABSORPTION TAIL OF POLYCRYSTALLINE SEMICONDUCTOR-FILMS

A comprehensive description of the broadening of the absorption tail i n polycrystalline semiconductor films has been presented by considerin g intrinsic inhomogeneity due to random distribution of grains and gra in boundary regions and the fluctuation in potential from local therma l vibrations present at the grains and grain-grain interfaces. The mod el has been applied to describe the absorption data of a number of pol ycrystalline films. The results of the analysis on CdSe and ZnTe, prep ared by hot wall evaporation, and on diamond films, prepared by plasma deposition of acetylene and hydrogen, are presented here.