A PHYSICAL BASIS FOR IRRADIATION-INDUCED MODIFICATION OF THIN-FILM STRESSES
Citation
A. Jain et U. Jain, A PHYSICAL BASIS FOR IRRADIATION-INDUCED MODIFICATION OF THIN-FILM STRESSES, Thin solid films, 256(1-2), 1995, pp. 116-119
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
SICI code
0040-6090(1995)256:1-2<116:APBFIM>2.0.ZU;2-Y
Abstract
A mechanism is proposed for the modification of stresses in thin films
by irradiation. A tensile stress causes preferential alignment of int
erstitial loops such that the normal to the plane of the loop is paral
lel to the direction of the stress. The aligned loops grow and produce
a positive strain in the lattice, which relieves the initial stress.