A PHYSICAL BASIS FOR IRRADIATION-INDUCED MODIFICATION OF THIN-FILM STRESSES

Authors
Citation
A. Jain et U. Jain, A PHYSICAL BASIS FOR IRRADIATION-INDUCED MODIFICATION OF THIN-FILM STRESSES, Thin solid films, 256(1-2), 1995, pp. 116-119
Citations number
20
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
256
Issue
1-2
Year of publication
1995
Pages
116 - 119
Database
ISI
SICI code
0040-6090(1995)256:1-2<116:APBFIM>2.0.ZU;2-Y
Abstract
A mechanism is proposed for the modification of stresses in thin films by irradiation. A tensile stress causes preferential alignment of int erstitial loops such that the normal to the plane of the loop is paral lel to the direction of the stress. The aligned loops grow and produce a positive strain in the lattice, which relieves the initial stress.