TRANSPORT-PROPERTIES OF CUGASE2 THIN-FILMS

Citation
Ba. Mansour et Ma. Elhagary, TRANSPORT-PROPERTIES OF CUGASE2 THIN-FILMS, Thin solid films, 256(1-2), 1995, pp. 165-170
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
256
Issue
1-2
Year of publication
1995
Pages
165 - 170
Database
ISI
SICI code
0040-6090(1995)256:1-2<165:TOCT>2.0.ZU;2-8
Abstract
The electrical conductivity sigma, Hall coefficient R(H) and thermoele ctric power Q of thermally evaporated CuGaSe2 thin films with differen t thicknesses have been measured at temperatures between 80 and 480 K. These properties were also measured at room temperature for thin film s with different growth conditions. All investigated films are p-type over the whole temperature range. Electrical conduction was studied in order to establish its mechanism. The effective mass m was found to increase with increasing temperature, as a degenerate p-type semicondu ctor.