ON THE FREQUENCY LOSS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES UNDER DEPLETION AND WEAK INVERSION

Authors
MEINERTZHAGEN A ELRHARBI S PETIT C JOURDAIN M
Citation
A. Meinertzhagen et al., ON THE FREQUENCY LOSS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES UNDER DEPLETION AND WEAK INVERSION, Thin solid films, 256(1-2), 1995, pp. 253-256
Citations number
23
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
256
Issue
1-2
Year of publication
1995
Pages
253 - 256
Database
ISI
SICI code
0040-6090(1995)256:1-2<253:OTFLOM>2.0.ZU;2-7
Abstract
Admittance measurements of metal-oxide-semiconductor capacitors, along with published data, are considered from a new point of view. Accordi ngly, the spectral shape of frequency loss and polarization is well de fined, and a novel approach of interpretation is necessary.