MODIFYING ELECTRON-PHONON SCATTERING RATES IN SEMICONDUCTOR QUANTUM-WELLS WITH THIN ALAS LAYERS

We have studied theoretically the electron-phonon scattering rates in GaAs/AlAs quantum wells which have additional thin AlAs layers in them using the dielectric continuum approach for the phonons. The confined and interface phonon modes and the intersubband electron-phonon scatt ering rates of these structures have been calculated. The system with an additional AlAs layer is found to have intersubband electron scatte ring rates which are increased modestly as compared to those for the c orresponding quantum well. These results show that scattering rates in general are expected to depend only weakly on the effects of system s tructure on the optical phonon spectra.