ELECTRICAL AND PHOTOVOLTAIC EFFECTS IN ORGANIC P-N-JUNCTION SOLAR-CELL USING FURFURAL RESIN (FR) AND THIAZOLE YELLOW (TY)

The electrical and photovoltaic properties of an organic p-n heterojun ction were investigated by measuring current-voltage (J-V) and capacit ance-voltage (C-V) characteristics at various temperatures. The device consists of an indium-tin oxide/furfural resin (p-type)/thiazole yell ow (n-type)/In (abbreviated ITO/FR (p-type)/TY (n-type)/In) structure. The J-V characteristics reveal that the diode quality factor is about 1.97 which is greater than unity. The C-V characteristics indicate th at a depletion layer of about 297 nm exists at the FR/TY interface. Fr om the analysis of the photoaction spectra of the device and optical a bsorption of the FR/TY layer, it was concluded that the photoactive la yer is formed at the FR/TY interface and both ITO and In form the ohmi c contact. The power conversion efficiency is about 1.25%, which is gr eater than that of a Schottky barrier based on FR and TY. The charge t ransport mechanism in the dark and under illumination has been investi gated by detailed analysis of the photoaction spectra, rectification a nd capacitance measurements.