We show that concepts, such as effective equivalent dose and the quali
ty factor, which have long been found useful in comparing the effects
of different kinds of ionizing radiation, are also applicable in corre
lating displacement damage effects in semiconductors. In the case of d
isplacement damage, the energy deposition process is determined by the
nonionizing energy loss (NIEL), instead of linear energy transfer (LE
T), as in ionization.