VERY-LOW PRESSURE NUCLEATION OF DIAMOND ON MIRROR-SMOOTH SILICON IN HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION SYSTEM

Authors
LIN ZD CHEN Y CHEN QJ LEE ST LAM YW
Citation
Zd. Lin et al., VERY-LOW PRESSURE NUCLEATION OF DIAMOND ON MIRROR-SMOOTH SILICON IN HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION SYSTEM, Chinese Physics Letters, 13(10), 1996, pp. 753-756
Citations number
5
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
13
Issue
10
Year of publication
1996
Pages
753 - 756
Database
ISI
SICI code
0256-307X(1996)13:10<753:VPNODO>2.0.ZU;2-8
Abstract
Under very low pressure (0.1 Torr) the high density nucleation of diam ond on mirror-smooth silicon in hot filament-chemical vapor deposition system was obtained. The nucleation density of order of 10(10)-10(11) cm(-2) was achieved, the same achievement which obtained ill microwav e plasma-chemical vapor deposition system with negative bias. In this paper the nucleation technique and the effect of low pressure on diamo nd nucleation were discussed in detail based on the molecular dynamics .