GATED HALL-EFFECT MEASUREMENTS IN HIGH-MOBILITY N-TYPE SI SIGE MODULATION-DOPED HETEROSTRUCTURES/

Authors
ISMAIL K ARAFA M STERN F CHU JO MEYERSON BS
Citation
K. Ismail et al., GATED HALL-EFFECT MEASUREMENTS IN HIGH-MOBILITY N-TYPE SI SIGE MODULATION-DOPED HETEROSTRUCTURES/, Applied physics letters, 66(7), 1995, pp. 842-844
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
7
Year of publication
1995
Pages
842 - 844
Database
ISI
SICI code
0003-6951(1995)66:7<842:GHMIHN>2.0.ZU;2-C