TELLURIUM-DOPED AL0.43GA0.57AS (IN-0.2)GAAS MODULATION-DOPED HETEROSTRUCTURES BY MOLECULAR-BEAM-EPITAXY/

Authors
JIANG WN NGUYEN NX UNDERWOOD RD MISHRA UK WILSON RG
Citation
Wn. Jiang et al., TELLURIUM-DOPED AL0.43GA0.57AS (IN-0.2)GAAS MODULATION-DOPED HETEROSTRUCTURES BY MOLECULAR-BEAM-EPITAXY/, Applied physics letters, 66(7), 1995, pp. 845-847
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
7
Year of publication
1995
Pages
845 - 847
Database
ISI
SICI code
0003-6951(1995)66:7<845:TA(MH>2.0.ZU;2-E