DEEP LEVELS IN UNDOPED IN0.5GA0.5P AND IN0.5GA0.5P0.99AS0.01 GROWN ONGAAS (100) SUBSTRATES

Citation
S. Lan et al., DEEP LEVELS IN UNDOPED IN0.5GA0.5P AND IN0.5GA0.5P0.99AS0.01 GROWN ONGAAS (100) SUBSTRATES, Applied physics letters, 66(7), 1995, pp. 872-874
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
66
Issue
7
Year of publication
1995
Pages
872 - 874
Database
ISI
SICI code
0003-6951(1995)66:7<872:DLIUIA>2.0.ZU;2-0