HIGH-MOBILITY INAS GROWN ON GAAS SUBSTRATES USING TERTIARYBUTYLARSINEAND TRIMETHYLINDIUM

Authors
WATKINS SP TRAN CA ARES R SOERENSEN G
Citation
Sp. Watkins et al., HIGH-MOBILITY INAS GROWN ON GAAS SUBSTRATES USING TERTIARYBUTYLARSINEAND TRIMETHYLINDIUM, Applied physics letters, 66(7), 1995, pp. 882-884
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
7
Year of publication
1995
Pages
882 - 884
Database
ISI
SICI code
0003-6951(1995)66:7<882:HIGOGS>2.0.ZU;2-7