THE SI, ER CRYSTAL - MODEL AND EXCITATION MECHANISM OF THE ER-O CENTER

Analysing the electronic structure of silicon crystals, both regular a nd doped with erbium, we conclude that the erbium ion tends to form bo nds with three ligands. The role of oxygen in the passivation of the f ormed dangling bond is discussed. Studies of the electric, magnetic, a nd optical properties of Si : Er grown by the Czochralsky method show that the Er2O complexes existing in these crystals become electrically and optically active only in the case when they locate near the shall ow donor (phosphorus).