NEW MECHANISM OF HOT-CARRIER GENERATION IN VERY SHORT-CHANNEL MOSFETS

Authors
CHILDS PA LEUNG CCC
Citation
Pa. Childs et Ccc. Leung, NEW MECHANISM OF HOT-CARRIER GENERATION IN VERY SHORT-CHANNEL MOSFETS, Electronics Letters, 31(2), 1995, pp. 139-141
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
2
Year of publication
1995
Pages
139 - 141
Database
ISI
SICI code
0013-5194(1995)31:2<139:NMOHGI>2.0.ZU;2-O
Abstract
Results are presented which suggest that as device dimensions are scal ed down, hot carrier reliability problems may re-emerge despite reduct ions in supply voltage. This conclusion is drawn from theoretical resu lts which show an increasingly important role played by electron-elect ron interactions as device dimensions are reduced.