ELECTRONIC TRAP MICROSCOPY - A NEW MODE FOR SCANNING ELECTRON-MICROSCOPY (SEM)

Insulating layers on conducting substrate are investigated by means of secondary electron field emission SEFE in a digital SEM. The kinetics of charge storage and release with time and temperature are controlle d and recorded by an external computer. The evaluation is performed pi xel-wise with respect to electronic trap concentration n(to), trap cap ture cross section sigma(c) and thermal activation energy E(t). Mappin g of these trap parameters indicates hidden inhomogenities, defects an d pre-treatments of the dielectric layers as well as the pattern of th ermal bleaching and release of electrons. The latter ones appear as in homogeneous processes starting with ''blinking'' centers and increasin g their concentration with time and temperature.