X-RAY PHOTOELECTRON-SPECTROSCOPY CHARACTERIZATION OF TIO2 FILMS DEPOSITED BY DYNAMIC ION-BEAM MIXING

Citation
Nk. Huang et al., X-RAY PHOTOELECTRON-SPECTROSCOPY CHARACTERIZATION OF TIO2 FILMS DEPOSITED BY DYNAMIC ION-BEAM MIXING, Surface & coatings technology, 70(1), 1994, pp. 69-71
Citations number
7
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
70
Issue
1
Year of publication
1994
Pages
69 - 71
Database
ISI
SICI code
0257-8972(1994)70:1<69:XPCOTF>2.0.ZU;2-F
Abstract
TiO2 films were prepared at room temperature by dynamic ion beam mixin g where titanium was Ar+ sputter deposited on iron substrates and simu ltaneously bombarded with argon or oxygen ion beams at an energy of 10 0 keV. The chemical bonding states of the elements on the surface of t he films were investigated by X-ray photoelectron spectroscopy (XPS). The XPS results show that carbon on the surface of the films exhibits different states for different bombarding ion species. Argon ion beam bombardment during film deposition induced carbonization forming an O- Ti-C bonding configuration, while oxygen ion bombardment did not. A me chanism related to this phenomenon is suggested.