RADIATION RECOMBINATION IN INASSB INASSBP DOUBLE HETEROSTRUCTURES/

Using photoluminescence (PL) and electroluminescence (EL) measurements and calculated energy band diagrams, we have studied the mechanisms o f radiation recombination in InAsSb/InAsSbP double heterostructures fo rming the basis of lasers emitting at 3.6 mum. Up to four PL lines are observed, which can be attributed to band-to-acceptor transitions in the active region, cladding layer and substrate and band-to-band trans itions in the substrate. In EL experiments emission from the active re gion and the InAs/InAsSbP interface was detected. The possibility of c reating a tunable radiation source emitting at two wavelengths is demo nstrated.