DIFFUSION INSTABILITY OF HOMOGENEOUS DISTRIBUTION OF MERCURY IN CADMIUM MERCURY TELLURIDE

Citation
Mi. Vasilevskiy et Ev. Anda, DIFFUSION INSTABILITY OF HOMOGENEOUS DISTRIBUTION OF MERCURY IN CADMIUM MERCURY TELLURIDE, Semiconductor science and technology, 10(2), 1995, pp. 157-162
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
10
Issue
2
Year of publication
1995
Pages
157 - 162
Database
ISI
SICI code
0268-1242(1995)10:2<157:DIOHDO>2.0.ZU;2-#
Abstract
A mechanism of formation of inhomogeneities in the alloy CdxHg1-xTe du ring either post-growth cooling or low-temperature annealing is propos ed, based on a diffusion instability in the interacting system which i ncludes cations in lattice sites, mercury interstitials and cation vac anies. The principal points of the mechanism are: (i) vacancies follow local variations of alloy composition, being always in local equilibr ium; (ii) their concentration depends superlinearly on local compositi on. The uniform distribution of composition and the native dopants bec omes unstable under a condition that is likely to be satisfied at temp eratures below 200-degrees-C in samples enriched with mercury intersti tials. We show that the instability should result in the formation of a 'layered' doping profile where the concentration of mercury intersti tials varies by a factor of 2-3 while the variation of composition is of the order of 10%. Possible consequences of this effect for the elec trophysical properties of the alloy are discussed.