Mi. Vasilevskiy et Ev. Anda, DIFFUSION INSTABILITY OF HOMOGENEOUS DISTRIBUTION OF MERCURY IN CADMIUM MERCURY TELLURIDE, Semiconductor science and technology, 10(2), 1995, pp. 157-162
A mechanism of formation of inhomogeneities in the alloy CdxHg1-xTe du
ring either post-growth cooling or low-temperature annealing is propos
ed, based on a diffusion instability in the interacting system which i
ncludes cations in lattice sites, mercury interstitials and cation vac
anies. The principal points of the mechanism are: (i) vacancies follow
local variations of alloy composition, being always in local equilibr
ium; (ii) their concentration depends superlinearly on local compositi
on. The uniform distribution of composition and the native dopants bec
omes unstable under a condition that is likely to be satisfied at temp
eratures below 200-degrees-C in samples enriched with mercury intersti
tials. We show that the instability should result in the formation of
a 'layered' doping profile where the concentration of mercury intersti
tials varies by a factor of 2-3 while the variation of composition is
of the order of 10%. Possible consequences of this effect for the elec
trophysical properties of the alloy are discussed.