C. Agashe et S. Mahamuni, DOPING-INDUCED CHANGES IN THE PHYSICAL-PROPERTIES OF IN2O3SN FILMS, Semiconductor science and technology, 10(2), 1995, pp. 172-178
Here we report studies carried out on heavily tin-doped and undoped in
dium oxide films. Structural, electronic transport and compositional p
roperties of the sprayed films deposited with different doping levels
of tin (0-110 at.% in solution) were investigated. X-ray diffraction,
room-temperature Hall effect measurements, conductivity measurements a
t low temperatures and x-ray photoelectron spectroscopy were used for
these studies. The films were polycrystalline and the preferred growth
showed systematic changes with dopant incorporation from [400] to [22
2]. The carrier mobility was very sensitive to these changes in orient
ation of preferred growth as well as the grain size. The high carrier
concentration (approximately 10(20) cm-3) implied that the films belon
g to the class of degenerate semiconductors. Such a high carrier conce
ntration was a result of increased non-stoichiometry and increased dop
ant incorporation. The conductivity measurements at low temperatures s
how that with increased Sn incorporation, electronic transport is gove
rned by ionized impurity scattering and acoustic lattice scattering.