F. Firszt et al., COMPOSITION DEPENDENCE OF THE UNIT-CELL DIMENSIONS AND THE ENERGY-GAPIN ZN1-XMGXSE CRYSTALS, Semiconductor science and technology, 10(2), 1995, pp. 197-200
Zn1-xMgxSe mixed crystals were grown by the high-pressure Bridgman met
hod in the x range 0.06 to 0.285. X-ray investigations show that with
increasing Mg content the transition from a sphalerite structure to wu
rtzite occurs at x = 0.185 +/- 0.03. After annealing in liquid zinc or
zinc vapour, investigated crystals exhibit n-type conductivity as wel
l as blue-violet and orange photoluminescence in the temperature range
from 40 K to room temperature.