HIGH-POWER CW OPERATION OF ALGAINP LASER-DIODE ARRAY OF 640 NM

Authors
SKIDMORE JA EMANUEL MA BEACH RJ BENETT WJ FREITAS BL CARLSON NW SOLARZ RW BOUR DP TREAT DW
Citation
Ja. Skidmore et al., HIGH-POWER CW OPERATION OF ALGAINP LASER-DIODE ARRAY OF 640 NM, IEEE photonics technology letters, 7(2), 1995, pp. 133-135
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
2
Year of publication
1995
Pages
133 - 135
Database
ISI
SICI code
1041-1135(1995)7:2<133:HCOOAL>2.0.ZU;2-0
Abstract
Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon micr ochannel cooler has resulted in more than 12 W of continuous wave outp ut power.