HIGH-PERFORMANCE 770-NM ALGAAS-GAASP TENSILE-STRAINED QUANTUM-WELL LASER-DIODES

Experimental results on tensile-strained Al0.34Ga0.66As-GaAs0.78P0.22 separate-confinement-heterostructure single-quantum-well (SCH-SQW) las er diodes are reported. Threshold current density as low as 260 A/cm2 for broad-stripe lasers with a cavity length of 1500 mum has been obse rved. Broad-stripe devices have operated cw at room temperature with o utput power as high as 620 mW/facet. Ridge-waveguide lasers have exhib ited cw threshold currents as low as 13.5 mA and output power of 90 mW . The output of the tensile-strained lasers is TM polarized.