MONOLITHIC INTEGRATION ON INP OF A WANNIER-STARK MODULATOR WITH A STRAINED MQW DFB 1.55-MU-M LASER

Authors
ALLOVON M FOUCHET S HARMAND JC OUGAZZADEN A ROSE B GLOUKHIAN A DEVAUX F
Citation
M. Allovon et al., MONOLITHIC INTEGRATION ON INP OF A WANNIER-STARK MODULATOR WITH A STRAINED MQW DFB 1.55-MU-M LASER, IEEE photonics technology letters, 7(2), 1995, pp. 185-187
Citations number
11
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
2
Year of publication
1995
Pages
185 - 187
Database
ISI
SICI code
1041-1135(1995)7:2<185:MIOIOA>2.0.ZU;2-Y
Abstract
We present the technical approach and the preliminary device results o n the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer cons ists of a lattice matched InGaAs-InAIAs superlattice (SL) grown by sol id source MBE. It is butt-coupled to a laser grown by AP-MOVPE whose a ctive layer includes a strained InGaAsP-InGaAsP MQW stack. Device resu lts cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidt h and 10 Gb/s eye diagram).